BC635-AP Ver la hoja de datos (PDF) - STMicroelectronics
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BC635-AP Datasheet PDF : 5 Pages
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BC635
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-Case • Thermal Resistance Junction-Case
Max
Max
125
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
IEBO
V(BR)CEO∗
VCE(sat)∗
Collector Cut-off
Current (IE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Collector-Emitter
Saturation Voltage
VCB = 30 V
VEB = 5 V
IC = 10 mA
IC = 500 mA
IB = 50 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = 500 mA
VCE = 2 V
hFE DC Current Gain
IC = 5 mA
IC = 150 mA
IC = 500 mA
VCE = 2 V
VCE = 2 V
VCE = 2 V
fT
Transition Frequency IC = 10 mA VCE = 5 V f = 50MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min. Typ.
45
25
40
25
100
Max.
0.1
0.1
0.5
1
250
Unit
µA
µA
V
V
V
MHz
2/5
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