2SC2881 Ver la hoja de datos (PDF) - Willas Electronic Corp.

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Fabricante

2SC2881

NPN SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

2SC2881

TRANSISTOR (NPN)

SOT-89

FEATURES

z Small Flat Package

z High Transition Frequency

1. BASE

z High Voltage

z Pb-Free package is available

2. COLLECTOR

RoHS product for packing code suffix ”G”

3. EMITTER

Halogen free product for packing code suffix “H”

APPLICATIONS

z Power Amplifier and Voltage Amplifier

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

y Symbol

r VCBO

VCEO

a VEBO

in IC

PC

RθJA

Tj

lim Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

120

120

5

800

500

250

150

-55~+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

e ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

r Parameter

P Collector-base breakdown voltage

Symbol

V(BR)CBO

Test conditions

IC=1mA,IE=0

Min Typ

120

Max

Unit

V

Collector-emitter breakdown voltage

V(BR)CEO IC=10mA,IB=0

120

V

Emitter-base breakdown voltage

V(BR)EBO IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=120V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

µA

DC current gain

hFE

VCE=5V, IC=100mA

80

240

Collector-emitter saturation voltage

VCE(sat) IC=500mA,IB=50mA

1

V

Base-emitter voltage

VBE

VCE=5V, IC=0.5A

1

V

Transition frequency

fT

VCE=5V,IC=100mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

CLASSIFICATION OF hFE

RANK

O

RANGE

80–160

MARKING

CO1

2012-0

Y

120–240

CY1

WILLAS ELECTRONIC CORP.

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