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MJ16010_ Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Fabricante
MJ16010_
NJSEMI
New Jersey Semiconductor NJSEMI
MJ16010_ Datasheet PDF : 3 Pages
1 2 3
MJ16010 MJW16010 MJ16O12 MJW16012
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC = 100mA, IB = 0)
VCEO(SUS) 450
Collector Cutoff Current
(VcEV = 850 Vdc, VBE(off) = 1 -5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1 -5 Vdc. Tc = 1 00°C)
!CEV
Collector Cutoff Current
(VCE = 850 Vdc,RBE = so n, TC = ioo°c)
Emitter Cutoff Current
<VEB = 6.0 Vdc,ic =o)
!CER
!EBO
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
'S/b
RBSOA
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 5.0Adc, !B = 0.7Adc)
OC = 10Adc, IB = 1.0 Adc)
OC = 10 Adc, |B = 1.0 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, |B = 1.0 Adc, TC = 100°C)
vCE(sat)
vBE(sat)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
7.0
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10Vdc, lE = 0,ftest=1.0kHz)
Cob
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rose Time
Storage Time
Fall Time
Storage Time
Fall Time
td
(lc = 10 Adc,
VCc = 250 Vdc,
'B1 ~ 1 0 Adc
PW = 30 us,
(lB2 = 2-0 Adc,
RB2 = 1 .6 £J)
tr
ts
tf
Duty Cycle < 2.0%)
ts
(VBE(off) = 5.0 Vdc)
tf
Inductive Load (Table 2)
Storage Time
Fall Time
(TC = 100°C)
Crossover Time
Storage Time
Fall Time
IB1 = 1.0 Adc,
VBE(off) = 5-0 Vdc,
V/->ir/ i \ 4DO VrtrM
(TC = 150°C)
Crossover Time
(1) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%
tsv
tfl
tc
tsv
tfi
tc
Typ
Max
Unit
Vdc
mAdc
0.25
1.5
2.5
mAdc
10
mAdc
See Figure 15
See Figure 16
Vdc
2.5
3.0
3.0
Vdc
1.5
1.5
400
pF
20
ns
200
900
150
500
40
650
1500
ns
30
150
50
200
850
30
70

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