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MJ16010_

SWITCHMODE Series NPN Silicon Power Transistors

New Jersey Semiconductor 

MJ16010 MJW16O10 MJ16012 MJW16012

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Table 2)

(1C = 100 mA, IB = 0)

VCEO(SUS) 450

Collector Cutoff Current

(VCEV = 850 Vdc, VBE(off) = 1 -5 Vdc)

(VCEV = 850 Vdc, VBE(off) = 1-5 Vdc, TC = 100°C)

Collector Cutoff Current

(VCE = 850 Vdc,RBE = so u, TC = ioo°c)

Emitter Cutoff Current

(VEB = 6.0 Vdc, IG = o)

'CEV

—

ICER

—

IEBO

—

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

Clamped Inductive SOA with Base Reverse Biased

'S/b

RBSOA

ON CHARACTERISTICS (1)

Collector-Emitter Saturation Voltage

(1C = 5.0 Adc, IB = 0.7 Adc)

(IC = 10Adc, IB = 1.3 Adc)

(lc = 10 Adc, IB = 1.3 Adc, TC = 100°C)

Base-Emitter Saturation Voltage

(\ = 10 Adc, IB = 1.3 Adc)

(1C = 10 Adc, IB = 1.3 Adc, Tc = 100°C)

DC Current Gain

(IC = 15 Adc, VcE = 5.0Vdc)

vCE(sat)

—

vBE(sat)

—

—

hFE

5.0

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 -0 kHz)

Cob

—

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

Rose Time

Storage Time

Fall Time

Storage Time

Fall Time

td

—

(1C = 10 Adc,

VCG = 250 Vdc,

'BI ~ 1 3 Adc

PW = 30 us,

(lB2 = 2.6Adc,

RB2=1.6fl)

tr

—

ts

—

tf

—

Duty Cycle < 2.0%)

«8

—

(VBE(off) = 5-0 Vdc)

tf

—

Inductive Load (Table 2)

Storage Time

Fall Time

Crossover Time

Storage Time

Fall Time

IB1 = 1.3 Adc,

VBE(off) = 5.0 Vdc,

VcE(pk) = 400 Vdc)

(TC = 100°C)

(TC = 150°C)

tSV

—

tfi

—

tc

—

»sv

—

tfi

—

Crossover Time

tc

(1) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%

Typ

Max

Unit

—

—

Vdc

mAdc

—

0.25

1.5

—

2.5

mAdc

—

10

mAdc

See Figure 15

See Figure 16

Vdc

—

2.5

3.0

—

3.0

Vdc

—

1.5

—

1.5

—

—

—

—

400

PF

20

—

ns

200

—

1200

—

200

—

650

—

80

—

800

1800

ns

50

200

90

250

1050

—

70

—

120

—

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