BPV11F Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BPV11F Datasheet PDF : 5 Pages
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www.vishay.com
200
160
120
RthJA
80
40
0
0
94 8300
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BPV11F
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter breakdown voltage
Collector emitter dark current
DC current gain
Collector emitter capacitance
Collector base capacitance
Collector light current
Angle of half sensitivity
IC = 1 mA
VCE = 10 V, E = 0
VCE = 5 V, IC = 5 mA, E = 0
VCE = 0 V, f = 1 MHz, E = 0
VCE = 0 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, = 950 nm, VCB = 5 V
V(BR)CEO
ICEO
hFE
CCEO
CCBO
Ica
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Ee = 1 mW/cm2, = 950 nm, IC = 1 mA
VS = 5 V, IC = 5 mA, RL = 100
VS = 5 V, IC = 5 mA, RL = 100
VS = 5 V, IC = 5 mA, RL = 100
p
0.5
VCEsat
ton
toff
fc
MIN.
70
3
TYP.
1
450
15
19
9
± 15
930
900 to 980
130
6
5
110
MAX.
50
UNIT
V
nA
pF
pF
mA
deg
nm
nm
300
mV
μs
μs
kHz
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
104
103
VCE = 10 V
102
101
10
20
94 8249
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
VCE = 5 V
1.6
Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Rev. 1.6, 03-May-13
2
Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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