BPV11F Ver la hoja de datos (PDF) - Vishay Semiconductors
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BPV11F Datasheet PDF : 5 Pages
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BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor
12784
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT
BPV11F
Ica (mA)
9
Note
• Test condition see table “Basic Characteristics”
(deg)
± 15
0.5 (nm)
900 to 980
ORDERING INFORMATION
ORDERING CODE
BPV11F
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp 10 ms
Tamb 47 °C
t 5 s, 2 mm from body
Connected with Cu wire, 0.14 mm2
VCBO
VCEO
VEBO
IC
ICM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
80
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.6, 03-May-13
1
Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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