BYG60 Ver la hoja de datos (PDF) - Philips Electronics
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BYG60 Datasheet PDF : 6 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Preliminary specification
BYG60 series
SYMBOL
PARAMETER
ERSM
non-repetitive peak reverse
avalanche energy
BYG60D to J
BYG60K and M
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.4
MIN. MAX. UNIT
−
10 mJ
−
7 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
IR
reverse avalanche
breakdown voltage
BYG60D
BYG60G
BYG60J
BYG60K
BYG60M
reverse current
trr
reverse recovery time
BYG60D to J
BYG60K and M
Cd
diode capacitance
BYG60D to J
BYG60K and M
CONDITIONS
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
VR = VRRMmax;
see Fig.6
VR = VRRMmax; Tj = 165 °C;
see Fig.6
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
VR = 0 V; f = 1 MHz
MIN.
−
−
TYP.
−
−
MAX.
0.98
1.20
UNIT
V
V
300
−
500
−
700
−
900
−
1100
−
−
−
−
−
−V
−V
−V
−V
−V
5 µA
100 µA
−
−
250 ns
−
−
300 ns
−
30
− pF
−
25
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 05
3
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