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Fabricante

BAS221

General purpose diode

Philips Electronics 

Philips Semiconductors

General purpose diode

Product specification

BAS221

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

200

315

UNIT

K/W

K/W

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

MAX.

see Fig.3

IF = 100 mA

IF = 200 mA

IF = 300 mA

see Fig.5

1

1.25

1.4

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

f = 1 MHz; VR = 0; see Fig.6

2

when switched from IF = 30 mA to 50

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.7

UNIT

V

V

V

nA

µA

pF

ns

1999 May 07

3

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