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MPSA56G

PNP SILICON TRANSISTOR

Unisonic Technologies 

MPSA56

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-4

V

Collector Current - Continuous

IC

-500

mA

Total device Dissipation

Linear Derating Factor above

TA=25°С

PD

625

mW

5

mW/°С

Total device Dissipation

Linear Derating Factor above

TC=25°С

PD

1500

12

mW

mW/°С

Junction Temperature

TJ

+125

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJC

RATINGS

200

83.3

„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

UNIT

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

BVCEO

IC=-1.0mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=-100μA, Ic=0

Collector Cutoff Current

ICEO

VCE=-60V, IB=0

Collector Cutoff Current

ICBO

VCB=-80V, IE=0

ON CHARACTERISTICS

Dc Current Gain

hFE

IC=-10mA, VCE=-1V

IC=-100mA, VCE=-1V

Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA, IB=-10mA

Base-Emitter On Voltage

VBE(ON) IC=-100mA, VCE=-1V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note 2)

fT

IC=-100mA, VCE=-1V, f=100MHz

Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

MIN TYP MAX UNIT

-80

V

-4

V

-0.1 μA

-0.1 μA

100

100

-0.25 V

-1.2 V

50

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-082.B

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