BSR15 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
BSR15 Datasheet PDF : 5 Pages
| |||
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV(BR)CEO
BV(BR)CBO
BV(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
ICEX
Collector Cut-off Current
IBEX
Reverse Base Current
On Characteristics
IC = -10mA, IB = 0
IC = -100µA, IE = 0
IE = -10µA, IC = 0
VCB = -50V
VCB = -50V, TA = 150°C
VCE = -30V, VEB = -0.5V
VCE = -30V, VEB = -3.0V
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = -0.1mA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE= -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
fT
Current Gain Bandwidth Product
Ccb
Output Capacitance
Ceb
Emitter-Base Capacitance
Switching Characteristics
IC = -50mA, VCE = -20V,
f = 100MHz, TA = 25°C
VCB = -10V, IE = 0, f = 1.0MHz
VCB = -2.0V, IE = 0, f = 1.0MHz
ton
Turn-On Time
td
Delay Time
tr
Rise Time
toff
Turn-Off Time
ts
Storage Time
tf
Fall Time
VCC = -30V, IC = -150mA,
IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Min.
-40
-60
-5.0
35
50
75
100
30
200
Typ.
300
Max. Units
V
V
V
-20
nA
-20
µA
-50
nA
-50
nA
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8.0
pF
30
pF
45
ns
10
ns
40
ns
100
ns
80
ns
30
ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 40mm × 40mm × 1.5mm
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002
Share Link: 