2N5064 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.
Número de pieza
componentes Descripción
Fabricante
2N5064 Datasheet PDF : 6 Pages
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2N5064
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Average on-state current
Repetitive peak on-state current
Non-repetitive peak on-state
current
I2t for fusing
Peak gate current
Peak gate power
Junction Temperature
Storage Temperature Range
符号
Symbol
VDRM,
VRRM
IT(RMS)
IT(AV)
ITRM
ITSM
I2t
IGM
PGM
Tj
Tstg
测试条件
Test Conditions
Half sine wave
TC≤67℃
TC≤102℃
Ta≤25℃
t=8.3ms
Ta=25℃
f=120Hz
Ta=25℃
t=8.3ms
tp=300μs,
数值
Rating
200
0.8
0.51
0.255
8.0
10
0.4
1
0.1
-65～125
-65～150
单位
Unit
V
A
A
A
A
A2S
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
符号
Symbol
IGT
IL
IH
VT
VGT
ID,IR
dv/dt
测试条件
Test Conditions
VD=VDRM(max)
RL=100Ω
gate open circuit
Tc =25℃
Tc=-65℃
最小值 典型值 最大值 单位
Min Typ Max Unit
200
μA
350
VD=12V
RGK=1KΩ
6.0 mA
VD=12V
RGK=1KΩ
5.0 mA
IT=1.2A peak tp=300μs δ≤0.01
1.7 V
Tc =25℃
VD=VDRM(max)RL=100
Ω; gate open circuit
Tc =-65℃
Tc=125℃ 0.1
0.8
1.2 V
VD=VDRM(max)
VR=VRRM(max)
Tc =25℃
Tc=125℃
TC=25℃ Tj=125℃
VDM=67%VDRM(max)
RGK=1KΩ exponential waveform
10
μA
50
25
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