2N5064 Ver la hoja de datos (PDF) - Central Semiconductor
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2N5064 Datasheet PDF : 3 Pages
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2N5060 THRU 2N5064
SILICON CONTROLLED RECTIFIERS
0.8 AMP, 30 THRU 200 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5062
2N5060
2N5063
2N5061
2N5064
SYMBOL
TEST CONDITIONS
TYP
TYP
td
VD=Rated VDRM, IGT=1.0mA,
3.0
3.0
tr
Forward Current=1.0A, di/dt=6.0A/μs
0.2
0.2
Forward Current=1.0A, tp=50μs,
tq
0.1% Duty Cycle, di/dt=6.0A/μs,
10
30
dv/dt=20V/μs, IGT=1.0mA
TO-92 CASE - MECHANICAL OUTLINE
UNITS
μs
μs
μs
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Cathode
2) Gate
3) Anode
MARKING:
FULL PART NUMBER
R5 (7-May 2015)
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