MMSTA56 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

MMSTA56

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX

Collector-base breakdown voltage V(BR)CBO

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-100μA,IE=0 MMSTA55 -60

MMSTA56 -80

IC=-1mA,IB=0 MMSTA55 -60

MMSTA56 -80

UNIT

V

V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0

-4

V

Collector cut-off current

Collector cut-off current

ICBO

VCB=-60V,IE=0 MMSTA55

VCB=-80V,IE=0 MMSTA56

ICEO

VCE=-50V,IB=0 MMSTA55

VCE=-60V,IB=0 MMSTA56

-0.1

μA

-0.1

-0.1

μA

-0.1

DC current gain

hFE

VCE=-1V,IC=-10mA

VCE=-1V,IC=-100mA

100

100

Collector-emitter saturation

voltage

VCE(sat) IC=-100mA, IB=-10mA

-0.25 V

Base-emitter on voltage

VBE(on)

VCE=-1V, IC=-100mA

-1.2 V

Transition frequency

fT

VCE=-1V,IC= -100mA,

50

f=100MHz

MHz

F063

Rev.A

www.gmicroelec.com

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