2N6036(2002) Ver la hoja de datos (PDF) - ON Semiconductor
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2N6036 Datasheet PDF : 8 Pages
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2N6035 2N6036 2N6038 2N6039
ACTIVE–REGION SAFE–OPERATING AREA
1.0
7.0
5.0
5.0Ăms
1.0Ăms
100 µs
3.0
dc
2.0
1.0
0.7
0.5
0.3
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.2
0.1
5.0 7.0 10
2N6036
2N6035
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6035, 2N6036
1.0
7.0
5.0
5.0Ăms
100 µs
1.0Ăms
3.0
dc
2.0
1.0
TJ = 150°C
BONDING WIRE LIMITED
0.7
THERMALLY LIMITED
0.5
@ TC = 25°C (SINGLE PULSE)
0.3
SECOND BREAKDOWN LIMITED
0.2
0.1
5.0 7.0 10
2N6039
2N6038
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. 2N6038, 2N6039
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
100
TC = 25°C
70
50
Cob
30
Cib
20
PNP
NPN
10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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