BD239A Ver la hoja de datos (PDF) - Power Innovations
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BD239A Datasheet PDF : 6 Pages
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BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AG
VCE = 4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AE
10
IC = 100 mA
IC = 300 mA
IC = 1 A
1·0
100
0·1
10
0·01
0·1
IC - Collector Current - A
Figure 1.
0·01
1·0
0·1
1·0
10
100
IB - Base Current - mA
Figure 2.
1000
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AF
1·0
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
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