BA6950FS(2010) Ver la hoja de datos (PDF) - ROHM Semiconductor
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Fabricante
BA6950FS Datasheet PDF : 10 Pages
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BA6950FS, BA6951FS
Technical Note
11) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
12) Switching of rotating direction (FWD/REV)
When the rotating direction is changed over by the motor rotating condition, switch the direction after the motor is
temporarily brought to the BRAKE condition or OPEN condition. It is recommended to keep the relevant conditions as
follows: via BRAKE: Longer than braking time*.
(* the time required for the output voltage to achieve potential below GND when brake is activated.)
via OPEN: The time longer than 1 ms is recommended.
13) Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
Pin A
N
N P+
Parasitic element
Resistor
Pin A
P
P+ N
P substrate
GND
Pin B C B
Transistor (NPN) Pin B
E
Parasitic
element
N P+
Parasitic element
N
P
P+ N
P substrate
GND
GND
B
C
E
Parasitic
element
GND
Other adjacent elements
Appendix: Example of monolithic IC structure
Ordering part number
BA
6950
FS - E2
Part No.
Part No.
6950
6951
Package
FS: SSOP-A16
Packaging and forming specification
E2: Embossed tape and reel
SSOP-A16
6.6 ± 0.2
(MAX 6.95 include BURR)
16 15 14 13 12 11 10 9
123 45678
<Tape and Reel information>
Tape
Quantity
Embossed carrier tape
2500pcs
Direction
of feed
E2
( ) The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
0.15 ± 0.1
0.1
0.36 ± 0.1
0.8
(Unit : mm)
Reel
1pin
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
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2010.02 - Rev.B
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