2SD1767 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

2SD1767

Medium power transistor(80V,0.7A)

Galaxy Semi-Conductor 

Production specification

Medium power transistor(80V,0.7A)

2SD1767

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0

80

V

Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO IE=50μA,IC=0

5

V

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

CLASSIFICATION OF hFE

Rank

P

Range

82-180

MARKING

DCP

VCB=50V,IE=0

VEB=4V,IC=0

VCE=3V,IC=0.1A

IC=0.5A, IB=0.05A

VCE=10V,IC=50mA,

f=100MHz

VCB=10V,IE=0,f=1MHz

Q

120-270

DCQ

0.5 μA

0.5 μA

120

390

0.2 0.4 V

120

MHz

10

pF

R

180-390

DCR

E058

Rev.A

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