MBR20100CTF-E1 Ver la hoja de datos (PDF) - Diodes Incorporated.
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MBR20100CTF-E1 Datasheet PDF : 13 Pages
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Maximum Ratings (Each Diode Leg) (Note 4)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = +122C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC = +118C
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave,
Single Phase, 60Hz)
Non Repetitive Peak Reverse Current, tP = 3µs
Operating Junction Temperature Range (Note 5)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model = C)
ESD (Human Body Model = 3B)
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRSM
TJ
TSTG
dv/dt
–
–
Rating
100
10
20
150
2
+150
-65 to +150
10000
>400
>8000
MBR20100C
Unit
V
A
A
A
A
oC
oC
V/µs
V
V
Notes:
4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
5. The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA.
Thermal Characteristics
Characteristic
Symbol
Rating
TO-220-3 (2)
2.5
Maximum Thermal Resistance (Junction to Case)
TO-220F-3 (Option 1)
4.5
(Note 6)
RθJC
TO-252-2 (1)
2.0
TO-263-2
2.0
TO-220-3 (2)
60
Maximum Thermal Resistance (Junction to Ambient)
TO-220F-3 (Option 1)
60
(Note 6)
RθJA
TO-252-2 (1)
50
TO-263-2
50
Note 6: Device mounted on heat sink, with minimum recommended pad layout per http://www.diodes.com
MBR20100C
Document number: DS36950 Rev. 5 - 2
5 of 13
www.diodes.com
Unit
oC/W
oC/W
July 2015
© Diodes Incorporated
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