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BAS16W

High-speed diode

Philips Electronics 

Philips Semiconductors

High-speed diode

Product specification

BAS16W

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

VR = 25 V

VR = 75 V

VR = 25 V; Tj = 150 °C

VR = 75 V; Tj = 150 °C;

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

when switched from IF = 10 mA;

tr = 20 ns; see Fig.8

MAX.

715

855

1

1.25

30

1

30

50

1.5

4

1.75

UNIT

mV

mV

V

V

nA

mA

mA

mA

pF

ns

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

300

625

UNIT

K/W

K/W

1999 May 06

3

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