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MBD54DWT1 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Dual Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 V @ IF = 10 mAdc
Anode 1
6 Cathode
MBD54DWT1
Motorola Preferred Device
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
N/C 2
5 N/C
Cathode 3
4 Anode
6 54
123
CASE 419B – 01, STYLE 6
SOT– 363
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
30
PF
150
1.2
Forward Current (DC)
Junction Temperature
Storage Temperature Range
DEVICE MARKING
IF
200 Max
TJ
125 Max
Tstg
– 55 to +150
MBD54DWT1 = BL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
30
—
CT
—
7.6
IR
—
0.5
VF
—
0.22
VF
—
0.41
VF
—
0.52
trr
—
—
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
VF
—
0.29
VF
—
0.35
IF
—
—
IFRM
—
—
IFSM
—
—
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
©MMoottoororloal,aInSc.m19a9l7l–Signal Transistors, FETs and Diodes Device Data
Unit
Volts
mW
mW/°C
mA
°C
°C
Max
Unit
—
Volts
10
pF
2.0
µAdc
0.24
Vdc
0.5
Vdc
1.0
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
200
mAdc
300
mAdc
600
mAdc
5–1
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