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MPSL51

Amplifier Transistor PNP Silicon

ON Semiconductor 

MPSL51

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain(1)

(IC = −50 mAdc, VCE = −5.0 Vdc)

hFE

40

250

—

Collector −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

Vdc

—

−0.25

—

−0.30

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

—

—

Vdc

−1.2

−1.2

SMALL−SIGNAL CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz)

fT

60

—

MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

8.0

pF

Small−Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe

20

—

—

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

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