BCV28(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BCV28
(Rev.:2001)

PNP Silicon Darlington Transistors

Infineon Technologies 

BCV28, BCV48

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 1000

10 3 BCV 28/48

Ι C mA

10 2

5

EHP00313

150 ˚C

25 ˚C

-50 ˚C

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 1000

10 3 BCV 28/48

Ι C mA

10 2

5

EHP00314

150 ˚C

25 ˚C

-50 ˚C

10 1

10 1

5

5

10 0

0

0.5

1.0 V 1.5

10 0

0

V CEsat

1.0

2.0 V 3.0

V BEsat

Collector-base capacitance CCB = f (VCBO) DC current gain hFE = f (IC)

Emitter-base capacitance CEB = f (VEBO) VCE = 5V

10 BCV 28/48

CEB0

(CCB0 )

pF

5

EHP00315

CCB0

CEB0

10 6 BCV 28/48

5

h FE

125 ˚C

10 5

25 ˚C

5

-55 ˚C

10 4

5

EHP00316

0

10 -1

10 0

V 101

10 3

10 -1

10 0

10 1

10 2 mA 10 3

VEB0 (VCB0 )

ΙC

5

Jul-12-2001

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