SMBYW01-200 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
SMBYW01-200 Datasheet PDF : 5 Pages
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SMBYW01-200
Fig. 1: Average forward power dissipation versus Fig. 2: Peak current versus form factor.
average forward current .
IM(A)
PF(av)(W)
10
1.0
9
0.9
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
8
0.8
7
0.7
6
P=1.5W
0.6
δ=1
5
P=1.0W
0.5
4
P=0.5W
0.4
3
P=0.25W
0.3
0.2
) 0.1
IF(av) (A)
t(s 0.0
c 0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
δ
Produ t(s) Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
Fig. 4: Non repetitive surge peak forward current
versus overload duration.
lete duc IF(av)(A)
so ro 1.2
b P 1.0
- O te 0.8
t(s) ole 0.6
c bs 0.4
u O 0.2
rod ) - 0.0
P t(s 0
25
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
50
75
100 125 150
IM(A)
8
7
6
5
4
3
2
1E-3
Ta=25°C
Ta=50°C
1E-2
Ta=75°C
t(s)
1E-1
1E+0
lete duc Fig. 5: Variation of thermal impedance junction to
so ro ambient versus pulse duration (recommended pad
b P layout, epoxy FR4, e(Cu)=35µm).
Fig 6: Forward voltage drop versus forward current
(maximum values).
O lete Zth(j-a)(°C/W)
o 1.00
Obsδ = 0.5
VFM(V)
50.00
10.00
Tj=125°C
δ = 0.2
0.10 δ = 0.1
1.00
Tj=25°C
Single pulse
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
0.10
IFM(A)
0.01
0.0 0.4 0.8 1.2 1.6 2.0 2.4
3/5
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