BAT54H Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

BAT54H

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

BAT54H

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage

Symbol

V(BR)R

Forward voltage

VF

Reverse leakage current

IR

Reverse recovery time

trr

Total capacitance

CT

Conditions

IR=10μA

IF=0.1mA

IF=1.0mA

IF=10mA

IF=30mA

IF=100mA

VR=25V

IF=10mA,IR=1.0mA

VR=1.0V,f=1.0MHz

Min.

30

Typ.

0.22

0.29

0.35

0.41

0.52

0.5

7.6

Max. Unit

V

0.24 V

0.32 V

0.40 V

0.5

V

0.8

V

2.0

μA

5.0

ns

10

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

B032

Rev.A

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