BAS16LT1 Ver la hoja de datos (PDF) - Leshan Radio Company
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BAS16LT1 Datasheet PDF : 2 Pages
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LESHAN RADIO COMPANY, LTD.
Switching Diode
3
CATHODE
1
ANODE
BAS16LT1
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
Symbol
VR
IF
I FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
BAS16LT1 = A6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20ns )
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
Min
IR
—
—
—
V (BR)
75
VF
—
—
—
—
CD
—
V FR
–-
t rr
—
QS
—
Max
1.0
50
30
—
715
855
1000
1250
2.0
1.75
6.0
45
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Unit
µAdc
Vdc
mV
pF
Vdc
ns
pC
G2–1/2
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