SD103CW Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

Fabricante

SD103CW

Schottky Barrier Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Schottky Barrier Diode

SD103AW/SD103BW/SD103CW

Parameter

Reverse Breakdown Voltage

SD103AW

SD103BW

SD103CW

Symbol

V(BR)R

Min.

40

30

20

Typ.

Forward voltage

VF

Reverse current

SD103AW

SD103BW IRM

SD103CW

Capacitance between terminals

CT

50

Reverse Recovery Time

trr

10

Max. Unit

V

0.37

V

0.60

5.0 μA

pF

ns

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=20mA

IF=200mA

VR=30V

VR=20V

VR=10V

VR=0,f=1MHz

IR=IF=200mA

Irr=0.1*IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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