SD103BW Ver la hoja de datos (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED

Número de pieza

componentes Descripción

Fabricante

SD103BW

SCHOTTKY BARRIER DIODE

MAKO SEMICONDUCTOR CO.,LIMITED 

SCHOTTKY BARRIER DIODE

SD103AW/BW/CW

FEATURES

Low Forward Voltage Drop.

Guard Ring Construction For Transient

Negligible Reverse Recovery Time.

Low Reverse Capacitance.

Protection.

MARKING:

SD103AW :S4 SD103BW:S5 SD103CW:S6

+

-

SOD-123

MAXIMUM RATINGS (TA=25 unless otherwise noted)

MA Parameter

Symbol

40 KO Non-Repetitive Peak reverse voltage

htt 08- Se Peak Repetitive Peak reverse voltage

VRM

VRRM

p: 37 mi Working Peak Reverse Voltage

VRWM

// 8- co DC Blocking

VR

ww 87 nd Forward Continuous Current

IF

w 3 uc Repetitive Peak Forward Current @t≤1.0s

IFRM

.m to Power Dissipation

Pd

ak r Thermal Resistance Junction to Ambient

RθjA

os Co Storage temperature

Tstg

SD103AW

40

28

SD103BW

30

21

350

1.5

400

300

-65-125

emi.hk/ ., Lim ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

ited Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage SD103AW

V(BR)R

40

V

SD103CW

20

14

Unit

V

V

V

V

mA

A

mW

/W

Conditions

IR=10μA

SD103BW

V(BR)R

30

V

IR =10μA

SD103CW

V(BR)R

20

V

IR =10μA

Forward voltage

VF

0.37

V

0.60

V

IF=20mA

IF=200mA

Reverse current

SD103AW

IRM

5.0

μA

VR=30V

SD103BW

IRM

5.0

μA

VR=20V

SD103CW

IRM

5.0

μA

VR=10V

Capacitance between terminals

CT

50

pF

VR=0,f=1MHz

Reverse Recovery Time

trr

10

ns

IR=IF=200mA

Irr=0.1*IR,RL=100Ω

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P1

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