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EGF1D

Surface Mount Glass Passivated Ultrafast Rectifier

Vishay Semiconductors 

www.vishay.com

EGF1A, EGF1B, EGF1C, EGF1D

Vishay General Semiconductor

Surface Mount Glass Passivated Ultrafast Rectifier

Superectifier®

GF1 (DO-214BA)

PRIMARY CHARACTERISTICS

IF(AV)

VRRM

IFSM

trr

VF

TJ max.

Package

1.0 A

50 V, 100 V, 150 V, 200 V

30 A

50 ns

1.0 V

175 °C

GF1 (DO-214BA)

Diode variations

Single

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

250 °C

• AEC-Q101 qualified

- Automotive ordering code: base P/NHE3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

MECHANICAL DATA

Case: GF1 (DO-214BA), molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current at TL = 125 °C

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

VRRM

VRMS

VDC

IF(AV)

IFSM

Operating junction and storage temperature range

TJ, TSTG

EGF1A

EA

50

35

50

EGF1B EGF1C

EB

EC

100

150

70

105

100

150

1.0

30

-65 to +175

EGF1D

ED

200

140

200

UNIT

V

V

V

A

A

°C

Revision: 25-Aug-17

1

Document Number: 88579

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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