BAS316
Silicon Epitaxial Planar Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Symbol Min Max Unit
Test Condition
Reverse Breakdown Voltage
Forward Voltage
V(BR)R
VF
Reverse Current
IR
Capacitance between terminals CT
Reverse Recovery Time
trr
100
-
V
0.715 V
0.855
1.0
1.25
-
1.0
μA
0.03
-
1.5
pF
-
4.0
ns
IR=100μA
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=25V
VR=0,f=1.0MHz
IF=IR=10mA,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
2014-03 01版
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