BAS316 Ver la hoja de datos (PDF) - Weitron Technology
Número de pieza
componentes Descripción
Fabricante
BAS316 Datasheet PDF : 3 Pages
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BAS316
S-BAS316
2.0
10 5
10 4
10 3
10 2
10
0
100
200
T J ( °C )
Fig.4 Reverse current as a function of junction
temperature.
1.6
0.8
f = 1 MHz ; T j =25°C;
0
0
4
8
12
16
V R( V )
Fig.5 Diode capacitance as a function of
reverse voltage; typical values.
(1) I R = 1 mA.
Input signal: reverse pulse rise time t r= 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ= 0.05;
Oscilloscope: rise time t r = 0.35 ns.
Fig.6 Reverse recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factorδ≤ 0.005.
Fig.7 Forward recovery voltage test circuit and waveforms.
WEITRON
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http://www.weitron.com.tw
03-Jul-2015
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