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MJD112

NPN Silicon Darlington Transistor

Fairchild Semiconductor 

MJD112

NPN Silicon Darlington Transistor

Features

• High DC Current Gain

• Built-in a Damper Diode at E-C

• Lead Formed for Surface Mount Applications (No Suffix)

November 2006

tm

Equivalent Circuit

C

B

1

D-PAK

1.Base 2.Collector 3.Emitter

R1

R2

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol

Parameter

R1 ≅ 10kΩ

E

R2 ≅ 0.6kΩ

Value

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

100

100

5

2

4

50

20

1.75

150

- 65 ~ 150

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCEO(sus)

ICEO

ICBO

IEBO

hFE

Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

* Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

IC = 30mA, IB = 0

VCE = 50V, IB = 0

VCB = 100V, IB = 0

VEB = 5V, IC = 0

VCE = 3V, IC = 0.5A

VCE = 3V, IC = 2A

VCE = 3V, IC = 4A

IC = 2A, IB = 8mA

IC = 4A, IB = 40mA

IC = 4A, IB = 40mA

VCE = 3A, IC = 2A

VCE = 10V, IC = 0.75A

VCB = 10V, IE = 0

f = 0.1MHz

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Min.

100

500

1000

200

25

Units

V

V

V

A

A

mA

W

W

°C

°C

Max.

20

20

2

12K

2

3

4

2.8

100

Units

V

µA

µA

mA

V

V

V

V

MHz

pF

©2006 Fairchild Semiconductor Corporation

1

MJD112 Rev. B

www.fairchildsemi.com

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