MJD112 Ver la hoja de datos (PDF) - Inchange Semiconductor
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MJD112 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VBE(on)* Base-Emitter On Voltage
IC= 2A; VCE= 3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 2A; VCE= 3V
hFE-3*
DC Current Gain
IC= 4A; VCE=3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.75A; VCE= 10V
MIN TYP. MAX UNIT
2.0
V
3.0
V
4.0
V
2.8
V
100
V
20 uA
2
mA
500
1K
12K
200
100
pF
25
MHz
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