DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PZTA42 Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza
componentes Descripción
Fabricante
PZTA42
Weitron
Weitron Technology Weitron
PZTA42 Datasheet PDF : 3 Pages
1 2 3
PZTA42
ON CHARACTERISTICS
DC Current Gain
(VCE = 10V,IC = 1mA)
(VCE = 10V,IC = 10mA)
(VCE = 10V,IC = 30mA)
Collector-Emitter Saturation Voltages
(IC = 20mA, IB = 2mA)
Base-Emitter Saturation Voltages
(IC = 20mA, IB = 2mA)
DYNAMIC CHARACTERISTICS
Current-Gain—Bandwidth Product
(VCE = 20V, IC = 10mA, f = 100MHz)
Output Capacitance
(VCB = 20 Vdc, f = 1MHz)
hFE1
25
-
-
-
hFE2
40
-
-
-
hFE3
40
-
-
-
VCE(sat)
-
-
500
mV
VBE(sat)
-
-
900
mV
fT
50
-
-
MHz
Cob
-
-
3
pF
120
100
80
60
40
20
0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
0.1
Typical Characteristics
80
Tj= 125 ˚C
70
60
50
25 ˚C
40
-55 ˚C
30
Tj=25 ˚C
VCE=20V
20
f=100MHz
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure .1 DC Current Gain
100
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
Ic, COLLECTOR CURRENT (mA)
Figure .2 Current-Gain-Bandwidth
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure.3 "On"Voltages
VCE(sat)@25 ˚C, ICIB = 10
VCE(sat)@125 ˚C, ICIB =10
VCE(sat)@ -55 ˚C, ICIB=10
VBE(sat)@25 ˚C, ICIB = 10
VBE(sat)@125 ˚C, ICIB =10
VBE(sat)@ -55 ˚C, ICIB =10
VBE(on)@25 ˚C, VCE = 10V
VBE(on)@125 ˚C, VCE = 10V
VBE(on)@-55 ˚C, VCE = 10V
WEITRON
2/3
http://www.weitron.com.tw
02-Jun-05

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]