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Número de pieza

componentes Descripción

Fabricante

BC337

Small Signal Transistors (NPN)

General Semiconductor 

BC337, BC338

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

DC Current Gain

at VCE = 1 V, IC = 100 mA

Current Gain Group -16 hFE

-25 hFE

-40 hFE

at VCE = 1 V, IC = 300 mA

Current Gain Group -16 hFE

-25 hFE

-40 hFE

100

160

250

160

250

400

250

400

630

60

130

–

100

200

–

170

320

–

Collector-Emitter Cutoff Current

at VCE = 45 V

BC337 ICES

–

2

100

at VCE = 25 V

BC338 ICES

–

2

100

at VCE = 45 V, Tamb = 125 °C

BC337 ICES

–

–

10

at VCE = 25 V, Tamb = 125 °C

BC338 ICES

–

–

10

Collector-Emitter Breakdown Voltage

at IC = 10 mA

BC338

V(BR)CEO

20

–

–

BC337

V(BR)CEO

45

–

–

Collector-Emitter Breakdown Voltage

at IC = 0.1 mA

BC338

V(BR)CES

30

–

–

BC337

V(BR)CES

50

–

–

Emitter-Base Breakdown Voltage

at IE = 0.1 mA

V(BR)EBO

5

–

–

Collector Saturation Voltage

at IC = 500 mA, IB = 50 mA

VCEsat

–

–

0.7

Base-Emitter Voltage

at VCE = 1 V, IC = 300 mA

VBE

–

–

1.2

Gain-Bandwidth Product

at VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

–

100

–

Collector-Base Capacitance

at VCB = 10 V, f = 1 MHz

CCBO

–

12

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

2001)

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Unit

–

–

–

–

–

–

nA

nA

µA

µA

V

V

V

V

V

V

V

MHz

pF

K/W

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