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BC337 Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
BC337
GE
General Semiconductor GE
BC337 Datasheet PDF : 5 Pages
1 2 3 4 5
BC337, BC338
Small Signal Transistors (NPN)
TO-92
.181 (4.6)
.142 (3.6)
max..022 (0.55)
.098 (2.5)
C
E
B
Dimensions in inches and (millimeters)
FEATURES
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power
output stages.
These types are also available subdi-
vided into three groups -16, -25, and -40,
according to their DC current gain. As com-
plementary types, the PNP transistors
BC327 and BC328 are recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Emitter Voltage
BC337 VCES
50
V
BC338 VCES
30
V
Collector-Emitter Voltage
BC337 VCEO
45
V
BC338 VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Peak Collector Current
ICM
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb = 25 °C
Ptot
6251)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
4/98

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