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Número de pieza

componentes Descripción

Fabricante

BF421

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General Semiconductor 

BF421, BF423

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Collector-Base Breakdown Voltage BF421 –V(BR)CBO 300

–

–

at –IC = 100 µA, IE = 0

BF423 –V(BR)CBO 250

–

–

Collector-Emitter Breakdown Voltage BF423 –V(BR)CEO 250

–

–

at –IC = 10 mA, IB = 0

Collector-Emitter Breakdown Voltage BF421 –V(BR)CER 300

–

–

at RBE = 2.7 kΩ, at –IC = 10 mA

Emitter-Base Breakdown Voltage

at –IE = 100 µA, IC = 0

–V(BR)EBO 5

–

–

Collector-Base Cutoff Current

at –VCB = 200 V, IE = 0

–ICBO

–

–

10

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, –VCE = 250 V

–ICER

50

at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C

–ICER

10

Collector Saturation Voltage

at –IC = 30 mA, –IB = 5 mA

–VCEsat

–

–

0.8

DC Current Gain

at –VCE = 20 V, –IC = 25 mA

Gain-Bandwidth Product

at –VCE = 10 V, –IC = 10 mA

hFE

50

–

–

fT

60

–

–

Feedback Capacitance

at –VCE = 30 V, –IC = 0, f = 1 MHz

Cre

–

–

1.6

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Unit

V

V

V

V

V

nA

nA

µA

V

–

MHz

pF

K/W

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