BSP75A Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BSP75A

Smart Lowside Power Switch

Siemens AG 

Preliminary data sheet HITFET® BSP 75A

Maximum Ratings at Tj=25°C unless otherwise specified

Parameter

Continuous drain source voltage

(overvoltage protection see page 4)

Drain source voltage for

short circuit protection

Load dump protection VLoadDump=UP+US; UP=13.5 V

RI1)=2 Ω; td=400ms; IN=low or high (8V)

RL=50 Ω

RI=2 Ω; td=400ms; IN=high (8V)

RL=22 Ω

Continuous input voltage

Peak input voltage

Operating temperature range

Storage temperature range

Power dissipation (DC)

Unclamped single pulse inductive energy

ID(ISO) = 0.7 A

Electrostatic discharge voltage (Human Body Model)

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

VDS

VDS

VLoadDump2)

VIN

VIN

Tj

Tstg

Ptot

EAS

VESD

Thermal resistance

junction soldering point: RthJS

junction - ambient3): RthJA

Values Unit

55 V

32 V

V

80

47

-0.2 ... +10 V

-0.2 ... +20 V

-40 ...+150 °C

-55 ...+150

1.8 W

550 mJ

4000 V

E

40/150/56

≤10 K/W

≤70

1)

2)

3)

RI=internal resistance of the load dump test pulse generator LD200

VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.

Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm2 copper area for pin 4 connection

Semiconductor Group

Page 2

1998-02-04

Share Link: