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componentes Descripción

Fabricante

BCW70LT1

General Purpose Transistors

ON Semiconductor 

BCW70LT1

104

103

102

101

100

10–1

10–2

–4

0

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

– 2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

0

TJ, JUNCTION TEMPERATURE (°C)

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 16. Using the model and the device thermal

response the normalized effective transient thermal resistance of

Figure 14 was calculated for various duty cycles.

To find ZθJA(t), multiply the value obtained from Figure 14 by the

steady state value RθJA.

Example:

Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading

of r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

Figure 15. Typical Collector Leakage Current

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