MJE15030G(2006) Ver la hoja de datos (PDF) - ON Semiconductor
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componentes Descripción
Fabricante
MJE15030G Datasheet PDF : 6 Pages
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MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 2. Thermal Response
20
16
10
100 ms
5 ms
dc
1.0
0.1
0.02
2.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
20
50
120 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
8.0
5.0
IC/IB = 10
TC = 25°C
3.0
VBE(off) = 9 V
2.0
5V
3V
1.0
1.5 V
0
0V
0 100 110 120 130 140 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Reverse−Bias Switching
Safe Operating Area
1000
500
200
100
50
30
20
10
1.5
Cib (NPN)
Cib (PNP)
Cob (PNP)
Cob (NPN)
3.0 5.0 7.0 10
30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
100 150
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