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MJE15030G(2006) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MJE15030G
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJE15030G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
= 20 (Min) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO−220AB Compact Package
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
MJE15028, MJE15029
MJE15030, MJE15031
VCEO
Vdc
120
150
Collector−Base Voltage
VCB
MJE15028, MJE15029
MJE15030, MJE15031
Vdc
120
150
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25°C
VEB
5.0
Vdc
IC
8.0
Adc
ICM
16
IB
2.0
Adc
PD
50
W
0.40
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
2.0
0.016
−65 to
+150
W
W/_C
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 4
http://onsemi.com
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
1
23
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
MJE150xxG
AY WW
MJE150xx = Device Code
x = 28, 29, 30, or 31
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE15028/D

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