IXST30N60C Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXST30N60C Datasheet PDF : 4 Pages
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Symbol
gfs
Cies
Coes
Cres
Q
g
Qge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
10
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3100
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
240
pF
30
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
100
nC
30
nC
38
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30
ns
30
ns
150 270 ns
90 150 ns
140 270 ns
70 120 ns
1.5 2.5 mJ
0.7 1.2 mJ
35
ns
35
ns
0.5
mJ
270
ns
150
ns
250
ns
140
2.5
mJ
1.2
mJ
(TO-247)
0.62 K/W
0.25
K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
IXSH/IXST 30N60B
IXSH/IXST 30N60C
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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