IXFA3N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFA3N80 Datasheet PDF : 2 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 ID25, pulse test
2.5 3.4
S
685
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
73
pF
16
pF
12
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
11
ns
RG = 12 W (External),
25
ns
14
ns
24
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
6
nC
9
nC
(TO-220)
1.25 K/W
0.25
K/W
IXFA 3N80
IXFP 3N80
TO-220 (IXFP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
3.6 A
14.4 A
1.5 V
trr
250 ns
QRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.52
mC
IRM
1.8
A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,017,508 5,049,961 5,187,117 5,486,715
5,034,796 5,063,307 5,237,481 5,381,025
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