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PN2907A Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP switching transistor
Product data sheet
PN2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−60
−5
−600
−800
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector-base cut-off current
VCB = −50 V; IE = 0 A
−
VCB = −50 V; IE = 0 A; Tj = 125 °C
−
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
DC current gain
VCE = −10 V; IC = −0.1 mA
75
VCE = −10 V; IC = −1 mA
100
VCE = −10 V; IC = −10 mA
100
VCE = −10 V; IC = −150 mA
100
VCE = −10 V; IC = −500 mA
50
collector-emitter saturation voltage IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA
−
IC = −150 mA; IB = −50 mA
−
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz −
emitter capacitance
VEB = −2 V; IC = ic = 0 A; f = 1 MHz
−
transition frequency
VCE = −20 V; IC = −50 mA; f = 100 MHz 200
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
2004 Oct 11
3
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