PN2907A Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

PN2907A

Si-Epitaxial Planar Switching Transistors

Diotec Semiconductor Germany  

PN2907 / PN2907A

Characteristics (Tj = 25°C)

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 50 V, (E open)

PN2907

PN2907A

- VCB = 50 V, Tj = 125°C, (E open)

PN2907

PN2907A

Gain-Bandwidth Product – Transitfrequenz

- VCE = 20 V, - IC = 50 mA, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 2 V, IC = ic = 0, f = 1 MHz

Switching times – Schaltzeiten (between 10% and 90% levels)

turn on

delay time

rise time

- VCC = 30 V, - VBE = 1.5 V

- IC = 150 mA, - IB1 = 15mA

turn off

storage time

fall time

- VCC = 30 V, - IC = 150 mA,

- IB1 = - IB2 = 15 mA

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

- VBEsat

–

–

- VBEsat

–

–

- ICBO

–

–

- ICBO

–

–

- ICBO

–

–

- ICBO

–

–

fT

200 MHz

–

CCBO

–

–

1.3 V

2.6 V

20 nA

10 nA

20 µA

10 µA

–

8 pF

CEBO

–

–

30 pf

ton

–

td

–

tr

–

toff

–

ts

–

tf

–

–

45 ns

–

10 ns

–

40 ns

–

100 ns

–

80 ns

–

30 ns

RthA

< 200 K/W 1)

PN2222 / PN2222A

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

Share Link: