BAS40-04(2004) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BAS40-04
(Rev.:2004)

Silicon Schottky Diode

Infineon Technologies 

BAS40.../BAS140W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 10 µA

Reverse current

VR = 30 V

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 40 mA

Forward voltage matching1)

IF = 10 mA

V(BR)

IR

VF

∆ VF

40

-

-V

-

-

1 µA

mV

250 310 380

350 450 500

600 720 1000

-

-

20

AC Characteristics

Diode capacitance

VR = 0 , f = 1 MHz

Differential forward resistance

IF = 10 mA, f = 10 kHz

Charge carrier life time

IF = 25 mA

CT

-

3

5 pF

RF

-

10

-Ω

τ rr

-

-

100 ps

1∆VF is the difference between lowest and highestVF in a multiple diode component.

3

Jan-16-2004

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