SB160 Ver la hoja de datos (PDF) - Diode Semiconductor Korea
Número de pieza
componentes Descripción
Fabricante
SB160 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SB120 - - - SB1A0
FIG.1 -- FORWARD CURRENT DERATING CURVE
1.0
0.75
0.5
0.25
0
0
SB120-SB140
Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
SB150-SB1A0
25 50
75 100 125
150 175
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
SB150-SB160
SB120-SB140
1
P ulse w idth=3 00 s
1% Du ty C ycle
SB170-SB1A0
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
400
SB120-SB140
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
100
SB150-SB1A0
10
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
FIG.2 --MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
50
40
30
20
10
01
TJ=TJMAX
8.3ms Single Half
Sine-Wave
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
1000
100
10
1
TJ=100℃
TJ=75℃
0.1
0.01
0
TJ=25
20
40 60
80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,Sec.
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