MPSA43 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MPSA43 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPSA43 TRANSISTOR (NPN)
FEATURES
z Low Current
z High Voltage
APPLICATIONS
z Video
z Telephony
z Professional Communication Equipment
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
200
6
0.2
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
hFE(3) *
VCE(sat)(1) *
VBE
*
(sat)
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=160V,IE=0
VEB=4V,IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA,IB=2mA
IC=20mA, IB=2mA
VCE=20V,IC=10mA,f=100MHz
VCB=20V,IE=0, f=1MHz
Min Typ Max Unit
200
V
200
V
6
V
0.1
μA
0.1
μA
25
40
200
50
0.4
V
0.9
V
50
MHz
4
pF
www.cj-elec.com
1
D,Dec,2015
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