MPSA43(2002) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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MPSA43 Datasheet PDF : 3 Pages
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MPSA43
NPN High Voltage Amplifier
• This device is designed for application as a video output to drive color
CRT and other high voltage applications.
• Sourced from process 48.
• See MPSA42 for characteristics.
1
TO-92
Absolute Maximum Ratings * TA=25°C unless otherwise noted
1. Emitter 2. Base 3. Collector
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
200
V
VCBO
Collector-Base Voltage
200
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
- Continuous
200
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0
200
V(BR)CBO Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
200
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 100µA, IC = 0
6.0
ICBO
Collector Cutoff Current
VCB = 160V, IE = 0
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
On Characteristics *
hFE
DC Current Gain
IC = 1.0mA, VCE = 10V
25
IC = 10mA, VCE = 10V
40
IC = 30mA, VCE = 10V
50
VCE(sat) Collector-Emitter Saturation Voltage
IC = 20mA, IB = 2.0mA
VBE(sat) Base-Emitter Saturation Voltage
IC = 20mA, IB = 2.0mA
Small Signal Characteristics *
fT
Current Gain Dandwidth Product
Ccb
Collector-Base Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = 10mA, VCE = 20V, f = 100MHz
50
VCB = 20V, IE = 0, f = 1.0MHz
Max. Units
V
V
V
0.1
µA
0.1
µA
200
0.4
V
0.9
V
MHz
4.0
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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