MPSA43(2010) Ver la hoja de datos (PDF) - ON Semiconductor
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MPSA43 Datasheet PDF : 6 Pages
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MPSA42, MPSA43
High Voltage Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSA43
200
MPSA42
300
Collector −Base Voltage
VCBO
Vdc
MPSA43
200
MPSA42
300
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0
Vdc
500
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/mW
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/mW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92
1
2
3
(TO−226AA)
CASE 29−11
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
A4x
AYWWG
G
x
=
2 or 3
A
= Assembly Location
Y
=
Year
WW
=
Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
September, 2010 − Rev. 6
Publication Order Number:
MPSA42/D
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