PRLL5817 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PRLL5817 Datasheet PDF : 12 Pages
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NXP Semiconductors
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
PRLL5817
VF
forward voltage
PRLL5818
VF
forward voltage
PRLL5819
IR
reverse current
Cd
diode capacitance
PRLL5817
PRLL5818
PRLL5819
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
VR = VRRMmax; note 1
VR = VRRMmax; Tj = 100 °C
VR = 4 V; f = 1 MHz
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD87 standard mounting conditions.
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
MIN. TYP. MAX. UNIT
−
−
320
mV
−
−
450
mV
−
−
750
mV
−
−
330
mV
−
−
550
mV
−
−
875
mV
−
−
340
mV
−
−
600
mV
−
−
900
mV
−
0.5
1
mA
−
5
10
mA
−
70
−
pF
−
50
−
pF
−
50
−
pF
CONDITIONS
note 1
VALUE UNIT
150
K/W
1999 Apr 22
4
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